ji angsu changjiang electronics technology co., ltd sot-223 plastic-encapsulate transistors PZTA06 transistor (npn) features ? low voltage and high current ? general purpose amplifier applications maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit co llector-base breakdown voltage v (br)cbo i c =0.1ma,i e =0 80 v co llector-emitter breakdown voltage v (br)ceo * i c =1ma,i b =0 80 v em itter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 4 v co llector cut-off current i cbo v cb =80v,i e =0 100 na co llector cut-off current i ceo v ce =60v,i b =0 100 na em itter cut-off current i ebo v eb =3v, i c =0 100 na h fe (1) v ce =1v, i c =10ma 100 dc current gain h fe(2) v ce =1v, i c =100ma 100 co llector-emitter saturation voltage v ce(sat) i c =100ma,i b =10ma 0.25 v ba se-emitter voltage v be v ce =1v, i c =100ma 1.2 v tr ansition frequency f t v ce =2v,i c =10ma, f=100mhz 100 mhz *p ulse test: pulse width 300s, duty cycle 2.0%. symbol parameter value unit v cb o collector-base voltage 80 v v ce o collector-emitter voltage 80 v v eb o emitter-base voltage 4 v i c co llector current 500 ma p c co llector power dissipation 1 w r ja t hermal resistance from junction to ambient 125 / w t j jun ction temperature 150 t st g storage temperature -55~+150 sot -223 1. base 2. collector 3. emitter marking: www.cj-elec.com 1 ' , - d q
1 10 100 0.01 0.1 1 11 01 0 0 0.1 1 10 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 10 10 100 11 01 0 0 100 01234 5678910 0 10 20 30 40 50 60 70 80 90 0.1 1 10 1 10 100 1000 0.0 0.3 0.6 0.9 1.2 0.1 1 10 100 v ce sat ?? =10 t a =25 t a =100 collector-emitter saturation volt age v ces at (v) collector current i c (ma) i c =10 t a =100 t a =25 i c v be sat ?? base-emit ter saturation voltage v besat (v) collector current i c (ma) p c ?? t a collect or power dissipation p c (w) ambient temperature t a ( ) 300 v ce =2v t a =25 o c 70 3 i c f t ?? trans ition frequency f t (mhz) collector current i c (ma) 500 500 v cb / v eb c ob / c ib ?? i c h fe ?? 500 v ce =1v t a =25 o c t a =100 o c 20 dc current gain h fe collector current i c (ma) 500 co mmon emitter t a =25 500ua 450ua 400ua 350ua 300ua 250ua 200ua 150ua 100ua i b =50ua st atic characteristic collector current i c (ma) collector-emitter voltage v ce (v) f=1mhz i e =0 / i c =0 t a =25 o c c ob c ib capacitance c ( pf) reverse volt age v (v) v be ?? i c collector current i c (ma ) base-em itter voltage v be (v) v ce =1v t a = 1 0 0 o c t a =2 5 ty pical characteristics www.cj-elec.com 2 ' , - d q
mi n. max. min. max. a ?? 1.800 ?? 0.071 a1 0.020 0.100 0.001 0.004 a2 1.500 1.700 0.059 0.067 b 0.660 0.840 0.026 0.033 b1 2.900 3.100 0.114 0.122 c 0.230 0.350 0.009 0.014 d 6.300 6.700 0.248 0.264 e 6.700 7.300 0.264 0.287 e1 3.300 3.700 0.130 0.146 e l 0.750 ?? 0.030 ?? 0 10 0 10 symbol dimensions in millimeters dimensions in inches 2.300(bsc) 0.091(bsc) sot-223 package outline dimensions sot-223 suggested pad layout www.cj-elec.com 3 ' , - d q
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' l d ' l p h q v l r q v d u h l q p l o o l p h w h u ' ' ' * + , : : ? 5 5 5 ' , * + 6 2 7 7 d s h d q g 5 h h o www.cj-elec.com ' , - d q
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